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標題: 非鎘之銅銦鎵硒薄膜太陽電池結構用氧硫化鋅緩衝層及N-型氧化鋅導電膜生長及物理特性之研究
The Preparation and Characterization of Zn(O,S) Buffer Layers and N-ZnO Conductive Films for Cd-Free CuInGaSe/sub 2/ Thin Film Photovoltaic Structures
作者: 龔志榮
關鍵字: 基礎研究
摘要: In this 3-year proposal, Zn(O,S) buffer layers, n-type ZnO conductive films and Cd-free Zn-based CuInGaSe2 photovoltaic (PV) structures will be prepared and characterized. In the first year of this study, low temperature (LT) Zn(O,S)-buffer layers will be deposited on sodium-lime glass (SLG) substrates by atomic layer deposition (ALD) using diethyl-zinc(DEZn), nitrons oxide (N2O) and diluted hydrogen sulfide (H2S)as precursors. By using X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM),and four-point probe method, we will study the surface morphology, nano-scaled structures, crystallinity ,and resistivity of the Zn(O,S) buffer layer so that an optimized LT- Zn(O,S) buffer layer can be achieved. In the 2nd year of this work, ALD-grown ZnO films will be doped using Al, In, and Ga, respectively, in order to obtain conductive n-ZnO films. Also, the influence of group-III dopants on the structural and morphological properties and the conductivities of n-ZnO films will be investigated as well. In the 3rd year of this investigation, SLG/Mo/p-CuInGaSe2/Zn(O,S) buffer/hr-ZnO/n-ZnO:III PV structures will be prepared to explore the device characteristics including open-circuit voltage, short-circuit current and quantum efficiency of the PV structures.
其他識別: NSC97-2112-M005-004-MY3
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