Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/60031
DC FieldValueLanguage
dc.contributor.advisor孫允武zh_TW
dc.contributor.advisorYun-wu sunen_US
dc.contributor.authorL. C. Lien_US
dc.contributor.authorS. Y. Huangen_US
dc.contributor.authorJ. A. Weien_US
dc.contributor.authorY. W. Suenen_US
dc.contributor.authorM. W. Leeen_US
dc.contributor.authorW. H. Hsiehen_US
dc.contributor.authorT. W. Liuen_US
dc.contributor.authorC. C. Chenen_US
dc.contributor.other國立中興大學奈米科學研究所zh_TW
dc.date2007-06zh_TW
dc.date.accessioned2014-06-09T05:49:09Z-
dc.date.available2014-06-09T05:49:09Z-
dc.identifier.urihttp://hdl.handle.net/11455/60031-
dc.language.isoen_USzh_TW
dc.publisherChina:Chinese Academy of Sciencesen_US
dc.relationInternational Conference on Nanoscience & Technologyen_US
dc.subjectCorrelated Electric Fluctuationsen_US
dc.subjectGaNen_US
dc.subjectNanowire Deviceen_US
dc.titleCorrelated Electric Fluctuations in GaN Nanowire Deviceen_US
Appears in Collections:奈米科學研究所
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