Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/6206
標題: 以準分子雷射製作之高效能低溫複晶矽薄膜電晶體之可靠度研究
The Reliability Study of High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors Made by Excimer Laser Crystallization
作者: 劉俊谷
Liu, Jun-Gu
關鍵字: Low Temperature Polycrystalline Silicon
低溫複晶矽薄膜電晶體
Reliability
constant voltage
constant current
UV light
可靠度
熱載子
定電壓
定電流
紫外光
出版社: 電機工程學系所
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摘要: 本論文主要分為三大部份: 1. 對p-Channel TFT與n-Channel TFT做傳統式定電壓應力測試 2. 使用定電流模式施加應力測試 3. 研究比較紫外光、定電壓及紫外光加偏壓對元件特性的影響 在第一部份中,首先對p-Channel及n-Channel做定電壓應力測試,分析其電特性隨應力時間變異之關係。其中n-Channel有LDD結構,p-Channel無LDD結構,發現其通道垂直準分子雷射掃瞄方向的元件,比通道平行準分子雷射掃瞄方向所製作的元件,除了電性上表現較差外,其變異性方面也是通道平行準分子雷射掃瞄方向來的好。 第二部份中,則探討到由於在有機發光二極體顯示器中的畫素電路,有一顆薄膜電晶體是以電流趨動,由電流的大小來決定發光的強度,因此我們使用不同強度的電流應力,測試在p-Channel TFT上,產生不同的衰退結果。在此我們使用電流流出電晶體或是電流流入電晶體二種不同的形式,隨著應力電流的強度改變,比較那一種形式的應力測試對薄膜電晶體的可靠度特性退化較小。 最後則是研究紫外光對元件特性之影響。我們除了探討紫外光效應外,也做了同時加紫外光與定電壓的應力測試,來比較這三種應力測試那一種最嚴重,發現到隨著紫外光照射元件,其電性呈現出不同的衰退結果。此外在完成紫外光照射後,再把元件經過不同時間不同溫度熱處理後,發現電性有明顯的恢復,並比較出那一個熱處理條件的電性恢復是最好的。另外做掃描式電子顯微鏡的量測,求出與ELA掃描不同方向之晶粒尺寸與標準差。並且利用拉曼光譜的材料分析去觀察試片經過紫外光照射後,矽鍵結成份的強度變化。
This thesis can be divided into three major parts: 1. Conventional constant voltage stress for p-Channel TFT and n-Channel TFT 2. Using constant current stress for p-Channel 3. The effects of UV light, constant voltage, and UV light with bias on TFT devices In the first part, we use constant voltage stress for TFT devives, and analyze the correlation between degradation and different stress time. In addition, n-Channel has LDD structure but p-Channel doesn't. We discover that the devices with channel parallel to excimer laser scanning direction, not only electrical characteristic but also variation are better than that of the devices with channel perpendicular to excimer laser scanning direction. In the second part, we know that in the pixel circuit of OLED, there is a TFT which is driven by current to decide the intensity of luminance. Therefore, we use different types of current stress for p-channel TFT, including current flowing into or out of the devices. With changing current intensity, we want to find which stressing type has better characteristic. Finally, we study the effect of UV light. Besides UV light stress, we do constant voltage stress and UV light with constant voltage stress to find which one cause the most serious degradation. We discover that UV light illuminates on the devices, and the different degradation occurs. After UV light illuminating, we anneal the devices with different temperature and time, and we find that the electrical characteristics of the illuminated devices will recover. We also find the best recovery condition is 2000C, 60min. The SEM picture of poly-Si film is used to calculate the grain size and standard deviation at different ELA scanning direction. We find that the grain size and standard deviation of poly-Si in paralled with ELA scanning direction are larger than that is perpendicular one. Finally, the Raman spectrum analysis of UV light illuminated poly-Si film is used to check the Si-Si bonds strength and to explain the effect of UV light.
URI: http://hdl.handle.net/11455/6206
其他識別: U0005-0708200610244000
文章連結: http://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-0708200610244000
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