請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/67656
標題: Diffusion barrier performance of TiVCr alloy film in Cu metallization
作者: Tsai, D.C.
張守一
Huang, Y.L.
Lin, S.R.
Jung, D.R.
Chang, S.Y.
Shieu, F.S.
薛富盛
期刊/報告no:: Applied Surface Science, Volume 257, Issue 11, Page(s) 4923-4927.
摘要: In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 degrees C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements' alloy barrier layer is very beneficial to prevent Cu diffusion. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/67656
ISSN: 0169-4332
文章連結: http://dx.doi.org/10.1016/j.apsusc.2010.12.149
顯示於類別:工學院

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