Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68031
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dc.contributor.authorHao, O.Y.en_US
dc.contributor.authorWu, Y.C.S.en_US
dc.contributor.authorChiou, H.H.en_US
dc.contributor.authorLiu, C.C.en_US
dc.contributor.authorCheng, J.H.en_US
dc.contributor.authorWen, O.Y.en_US
dc.contributor.authorChiou, S.H.en_US
dc.contributor.authorShiue, S.T.en_US
dc.contributor.authorChueh, Y.L.en_US
dc.contributor.authorChou, L.J.en_US
dc.date2006zh_TW
dc.date.accessioned2014-06-11T05:56:10Z-
dc.date.available2014-06-11T05:56:10Z-
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/68031-
dc.description.abstractElectrical performance was found to be closely related to the variation of nanosized interface morphology in previous studies. This work investigated in detail the microstructural development of in- and anti-phase bonded interfaces for n-type (100) GaAs wafers treated at 500, 600, 700 and 850 degrees C. The interfacial energy of anti-phase bonding is higher than that of in-phase bonding based on the first-principles calculations. The higher interface energy tends to stabilize the interfacial oxide layer. The continuous interfacial oxide layer observed below 700 degrees C can deteriorate the electrical property due to its insulating property. However, the existence of nanoscaled oxide at anti-phase bonded interfaces can improve the electrical conductivity at 700 degrees C. This is due to the suppression of the evaporation of As atom by the interfacial nanoscaled oxides based on the analysis of autocorrelation function and energy dispersive x-ray spectroscopy. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Physics Lettersen_US
dc.relation.ispartofseriesApplied Physics Letters, Volume 88, Issue 11.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.2185611en_US
dc.subjectthin-filmsen_US
dc.subjecttemperatureen_US
dc.subjectfabricationen_US
dc.subjectresistanceen_US
dc.titleAnomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafersen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.2185611zh_TW
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