Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68038
標題: Effects of stress on the growth of TiSi2 thin films on (001)Si
作者: Cheng, S.L.
Huang, H.Y.
Peng, Y.C.
Chen, L.J.
Tsui, B.Y.
Tsai, C.J.
Guo, S.S.
關鍵字: size oxide openings
epitaxial-growth
(111)si
nisi2
期刊/報告no:: Applied Physics Letters, Volume 74, Issue 10, Page(s) 1406-1408.
摘要: Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800 degrees C for 30 s, the thickness of the C54-TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti silicide thin films. (C) 1999 American Institute of Physics. [S0003-6951(99)04910-4].
URI: http://hdl.handle.net/11455/68038
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.123565
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