Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68038
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dc.contributor.authorCheng, S.L.en_US
dc.contributor.authorHuang, H.Y.en_US
dc.contributor.authorPeng, Y.C.en_US
dc.contributor.authorChen, L.J.en_US
dc.contributor.authorTsui, B.Y.en_US
dc.contributor.authorTsai, C.J.en_US
dc.contributor.authorGuo, S.S.en_US
dc.date1999zh_TW
dc.date.accessioned2014-06-11T05:56:11Z-
dc.date.available2014-06-11T05:56:11Z-
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/68038-
dc.description.abstractTensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54-TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800 degrees C for 30 s, the thickness of the C54-TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti silicide thin films. (C) 1999 American Institute of Physics. [S0003-6951(99)04910-4].en_US
dc.language.isoen_USzh_TW
dc.relationApplied Physics Lettersen_US
dc.relation.ispartofseriesApplied Physics Letters, Volume 74, Issue 10, Page(s) 1406-1408.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.123565en_US
dc.subjectsize oxide openingsen_US
dc.subjectepitaxial-growthen_US
dc.subject(111)sien_US
dc.subjectnisi2en_US
dc.titleEffects of stress on the growth of TiSi2 thin films on (001)Sien_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.123565zh_TW
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