請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/68044
標題: Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces
作者: Yang, C.C.
Lin, C.F.
Lin, C.M.
Chang, C.C.
Chen, K.T.
Chien, J.F.
Chang, C.Y.
關鍵字: electroluminescence
gallium compounds
III-V semiconductors
indium
compounds
light emitting diodes
magnesium
nanoporous materials
photoelectrochemistry
wide band gap semiconductors
leds
期刊/報告no:: Applied Physics Letters, Volume 93, Issue 20.
摘要: InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.
URI: http://hdl.handle.net/11455/68044
ISSN: 0003-6951
文章連結: http://dx.doi.org/10.1063/1.3027068
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