Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68071
DC FieldValueLanguage
dc.contributor.authorHsu, H.F.en_US
dc.contributor.authorChan, H.Y.en_US
dc.contributor.authorChen, T.H.en_US
dc.contributor.authorWu, H.Y.en_US
dc.contributor.authorCheng, S.L.en_US
dc.contributor.authorWu, F.B.en_US
dc.date2011zh_TW
dc.date.accessioned2014-06-11T05:56:13Z-
dc.date.available2014-06-11T05:56:13Z-
dc.identifier.issn0169-4332zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/68071-
dc.description.abstractAs metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi2 layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 degrees C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi2) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi2 layer with an atomically flat interface was formed by annealing at 700 degrees C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Surface Scienceen_US
dc.relation.ispartofseriesApplied Surface Science, Volume 257, Issue 17, Page(s) 7422-7426.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.apsusc.2011.02.108en_US
dc.titleEpitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(100) systemsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.apsusc.2011.02.108zh_TW
Appears in Collections:期刊論文
文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.