Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/68917
標題: Effect of Dysprosium Substitution on the Properties of Bismuth Titanate Thin Films Prepared by Sol-Gel Method
作者: Kao, M.C.
Chen, H.Z.
Young, S.L.
Yu, C.C.
Lin, C.H.
Lin, C.C.
Lee, C.M.
關鍵字: Bismuth titanate
microstructure
sol-gel
ferroelectric
ferroelectric properties
blt
期刊/報告no:: Ferroelectrics, Volume 382, Page(s) 182-186.
摘要: Dysprosium-substituted bismuth titanate (Bi(3.2)Dy(0.8)Ti(3)O(12), BDT) thin films were successfully deposited on Pt(111)/Ti/SiO(2)/Si(100) substrates by a sol-gel method. The effects of dysprosium-substitution on the microstructure and ferroelectric properties of Bi(4)Ti(3)O(12) thin films were investigated. X-Ray diffraction analysis reveals that the highly degree of (117) orientation can be obtained for BDT thin films. The improved ferroelectric properties can be attributed to the enhanced degree of (117) orientation of Bi(3.2)Dy(0.8)Ti(3)O(12) thin films. The highly (117)-oriented Bi(3.2)Dy(0.8)Ti(3)O(12) thin films exhibit high remanent polarization (2P(r)) of 52 mu C/cm(2) and low coercive field (2E(c)) of 120 kV/cm. The corresponding results show that the obtained Bi(3.2)Dy(0.8)Ti(3)O(12) thin film exhibited excellent ferroelectric properties and, thus, was suitable for application to non-volatile ferroelectric random access memory applications.
URI: http://hdl.handle.net/11455/68917
ISSN: 0015-0193
文章連結: http://dx.doi.org/10.1080/00150190902873279
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