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|標題:||High-Performance Single-Crystal-Like Nanowire Poly-Si TFTs With Spacer Patterning Technique|
|期刊/報告no：:||Ieee Electron Device Letters, Volume 32, Issue 3, Page(s) 330-332.|
|摘要:||In this letter, high-performance single-crystal-like nanowire poly-Si TFTs with simple spacer patterning technique were demonstrated and characterized. Due to the nanoscale dimension formed by spacer patterning technique, each nanowire is easily transformed within one crystalline grain of the standard sequential-lateral-solidification (SLS) poly-Si film with the regularly arranged grains and thus performed with a single-crystallike device channel. Due to the high-crystallinity channel, together with the tri-gated structure, the fabricated devices revealed good device integrity of high field-effect mobility of 477 cm(2)/V . s and good ON/OFF current ratio of 1.07 x 10(8).|
|Appears in Collections:||期刊論文|
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