Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69084
標題: Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
作者: Lin, C.F.
Yang, Z.H.
Zheng, J.H.
Dai, J.H.
關鍵字: GaN
light-emitting diode (LED)
light extration efficiency
microroughening sidewall
photoelectrochemical oxidation
gan
surface
layers
期刊/報告no:: Ieee Photonics Technology Letters, Volume 17, Issue 10, Page(s) 2038-2040.
摘要: In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga2O3 layers then formed around the GaN:Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga2O3-air layers, by a rough Ga2O3 surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.
URI: http://hdl.handle.net/11455/69084
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2005.854347
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