Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69089
標題: The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5-SiO2 distributed Bragg reflectors
作者: Kao, C.C.
Lu, T.C.
Huang, H.W.
Chu, J.T.
Peng, Y.C.
Yao, H.H.
Tsai, J.Y.
Kao, T.T.
Kuo, H.C.
Wang, S.C.
Lin, C.F.
關鍵字: AlN
distributed Bragg reflector (DBR)
GaN
vertical-cavity
surface-emitting laser (VCSEL)
spontaneous emission
continuous-wave
blue
diodes
performance
期刊/報告no:: Ieee Photonics Technology Letters, Volume 18, Issue 5-8, Page(s) 877-879.
摘要: The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AIN-GaN distributed Bragg reflector (DBR) and eight pairs Ta2O5-SiO2 DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 mu m. The laser beam has a near linear polarization with a degree of polarization of about 84%. The laser shows a high spontaneous emission coupling efficiency of about 5 x 10(-2) and a high characteristic temperature of about 244 K.
URI: http://hdl.handle.net/11455/69089
ISSN: 1041-1135
文章連結: http://dx.doi.org/10.1109/lpt.2006.871814
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