請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/69105
標題: Characteristics of High-T-c Josephson Junction Fabricated by Focused Ion Beam and Ion Damage
作者: Wu, C.H.
Kuo, W.C.
Chou, Y.T.
Chen, J.H.
Yang, H.C.
關鍵字: Focused ion beam
ion implantation
Josephson junction
SQUID
quantum interference devices
thin-films
nanolithography
superconductors
arrays
pairs
期刊/報告no:: Ieee Transactions on Applied Superconductivity, Volume 19, Issue 3, Page(s) 210-213.
摘要: A high-T-c Josephson junction and superconducting quantum interference devices (SQUIDs) were fabricated by focused ion beam (FIB) milling and 150 keV oxygen ion implantation. A single layer gold mask with a small aperture of 28-73 nm defined by direct milling with FIB, was used. The voltage versus current characteristics of high-T-c YBa2Cu3O7-x Josephson junctions were measured under microwaves. Shapiro steps were observed in the single junction. The voltage versus current and voltage versus magnetic field characteristics of a SQUID were measured.
URI: http://hdl.handle.net/11455/69105
ISSN: 1051-8223
文章連結: http://dx.doi.org/10.1109/tasc.2009.2018366
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