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|標題:||A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design|
|期刊/報告no：:||Ieee Transactions on Microwave Theory and Techniques, Volume 49, Issue 2, Page(s) 406-409.|
|摘要:||In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S-22 observed in a Smith chart can be explained by the poles and zeros of S-22.|
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