Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69169
標題: A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design
作者: Lu, S.S.
Meng, C.C.
Chen, T.W.
Chen, H.C.
關鍵字: poles
S-parameters
transistors
zeros
期刊/報告no:: Ieee Transactions on Microwave Theory and Techniques, Volume 49, Issue 2, Page(s) 406-409.
摘要: In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S-22 observed in a Smith chart can be explained by the poles and zeros of S-22.
URI: http://hdl.handle.net/11455/69169
ISSN: 0018-9480
文章連結: http://dx.doi.org/10.1109/22.903109
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