Please use this identifier to cite or link to this item:
標題: A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design
作者: Lu, S.S.
Meng, C.C.
Chen, T.W.
Chen, H.C.
關鍵字: poles
期刊/報告no:: Ieee Transactions on Microwave Theory and Techniques, Volume 49, Issue 2, Page(s) 406-409.
摘要: In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S-22 observed in a Smith chart can be explained by the poles and zeros of S-22.
ISSN: 0018-9480
Appears in Collections:期刊論文



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.