Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69512
DC FieldValueLanguage
dc.contributor.authorWang, C.C.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.authorLien, S.Y.en_US
dc.contributor.authorLin, Y.S.en_US
dc.contributor.authorLiu, C.Y.en_US
dc.contributor.authorHsu, C.H.en_US
dc.contributor.authorChen, C.F.en_US
dc.date2012zh_TW
dc.date.accessioned2014-06-11T05:58:25Z-
dc.date.available2014-06-11T05:58:25Z-
dc.identifier.issn1110-662Xzh_TW
dc.identifier.urihttp://hdl.handle.net/11455/69512-
dc.description.abstractThe nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.en_US
dc.language.isoen_USzh_TW
dc.relationInternational Journal of Photoenergyen_US
dc.relation.ispartofseriesInternational Journal of Photoenergy.en_US
dc.relation.urihttp://dx.doi.org/10.1155/2012/890284en_US
dc.subjectchemical-vapor-depositionen_US
dc.subjecthydrogenated amorphous-siliconen_US
dc.subjectefficiencyen_US
dc.subjectalloysen_US
dc.titleCharacterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layeren_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1155/2012/890284zh_TW
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