Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69581
標題: Analysis of DC characteristics and small signal equivalent circuit parameters of GaAs metal-semiconductor field effect transistors with different gate lengths and different gate contours by two-dimensional device simulations
作者: Meng, C.C.
Su, J.Y.
Yang, S.M.
關鍵字: GaAs MESFET
small signal equivalent circuit and 2-D device simulation
avalanche breakdown
mesfets
interface
design
model
fets
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 9A, Page(s) 6389-6394.
摘要: The gate length and gate contour of a GaAs metal-semiconductor field effect transistor (MESFET) device play important roles in determining the small signal circuit parameters and large signal breakdown voltage behavior, GaAs MESFETs with different gate lengths and gate contours were studied by the two-dimensional (2-D) semiconductor device simulations to investigate the dependence of small signal circuit parameters and breakdown voltage on gate length and gate contour. The results show that gate length affects small-signal circuit parameter C(gs) while gate contour affects C(gd). The breakdown voltage has strong dependence on gate contour and little dependence on gage length.
URI: http://hdl.handle.net/11455/69581
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.44.6389
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