Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69583
標題: Dynamical study of single silver atoms on Si(111)-7 x 7 surfaces
作者: Ho, M.S.
Su, C.C.
Tsong, T.T.
關鍵字: scanning tunneling microscopy
silver
diffusion
scanning-tunneling-microscopy
cu/si(111) quasi-5x5 overlayer
hydrogen-atoms
si atoms
ag
diffusion
growth
nucleation
adsorption
au/si(111)
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 3B, Page(s) 2382-2385.
摘要: The dynamics and interactions of silver atoms on Si( 11 l)-7 x 7 Surfaces are investigated using variable-temperature scanning tunneling microscopy (STM). The activation energies and pre-exponential factors upon the room temperature are estimated to be 0.81 and 0.9eV, and 10(9.65) and 10(10.68) for the hopping out of the faulted halves and for hopping out of unfaulted halves, respectively. The behavior exhibited by two silver atoms that jump into a single half-Unit Cell is also addressed. Details of the tracking of single silver atom, that hop within a 7 x 7 half-unit cell are reexamined at similar to 80K using low-temperature STM. The analytical data revealed that silver atoms diffuse within a 7 x 7 unit cells via a corner adatom-rest atom-center adatom-rest atom-corner adatom diffusion pathway in a faulted half under the stress associated with 7 x 7 reconstruction.
URI: http://hdl.handle.net/11455/69583
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.45.2382
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