Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69586
標題: Fabrication InGaN nanodisk structure in GaN reverse hexagonal pyramid
作者: Lin, C.F.
Dai, J.J.
Zheng, J.H.
Yang, Z.J.
關鍵字: Ga : Mg
inverted hexagonal pyramids
InGaN/GaN
multi-quantum-well
(MOW)
strain relief
photoluminescence (PL)
gallium nitride nanorods
room-temperature
wet
growth
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3818-3821.
摘要: Small self-assembled inverted hexagonal pyramids consisting of GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were fabricated using photoelectrochemical wet etching. Lateral etching, bottom-up etching, and anisotropic etching are the sequential formation mechanism of such pyramids during the wet etching. The inverted hexagonal pyramids were measured to be 245 nm in width and 184 nm in height, and the angle between the top GaN:Mg surface and the pyramid sidewall was calculated to be about 56.3 degrees. Due to the strain relief in the nano-disk MQW structure, we induced an emission peak of photoluminescence at the tip of the inverted hexagonal pyramids, which had a strong blue shift of 244 meV measured at 100 K.
URI: http://hdl.handle.net/11455/69586
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.45.3818
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