Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69590
標題: Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer
作者: Chang, Y.A.
Luo, C.Y.
Ku, H.C.
Kuo, Y.K.
Lin, C.F.
Wang, S.C.
關鍵字: semiconductor lasers
quaternary InAlGaN alloys
numerical simulation
electronic blocking layer
leakage current
chemical-vapor-deposition
alingan barriers
diodes
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 11, Page(s) 7916-7918.
摘要: Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al : In = 5 : 1) indicates that a lower threshold current and higher characteristic temperature (T(0)) value can be obtained when the Al composition is higher than 20%. When Al = 25%, the threshold current is reduced at the expense of a decreased To value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300-370 K. The decreased T(0) value is mainly attributed to the increase in electronic leakage current.
URI: http://hdl.handle.net/11455/69590
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.44.7916
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