請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/69602
標題: Rapid energy transfer annealing for the crystallization of amorphous silicon
作者: Jiang, Y.L.
關鍵字: rapid energy transfer annealing
amorphous silicon
polysilicon
gaas
films
期刊/報告no:: Japanese Journal of Applied Physics Part 2-Letters, Volume 42, Issue 8B, Page(s) L999-L1001.
摘要: A rapid energy transfer annealing using an energy plate efficiently transferring photon energy to heat energy and by adjusting gas heat conduction can provide high energy transfer efficiency and control ability to rapidly crystallize amorphous silicon to polysilicon. The X-ray diffraction (XRD), Raman scattering, transmission electron microscopy (TEM), atomic force microscopy (AFM), and I-V measurements demonstrate that both thin and thick a-Si films can be fully crystallized within 20 three-second 850degreesC pulses annealing, that the films before and after annealing have the same roughness of about 1.3 nm and the conductivities of about 1.0 x 10(-10) and 2.3 X 10(-7) (Omega.cm)(-1), respectively.
URI: http://hdl.handle.net/11455/69602
ISSN: 0021-4922
文章連結: http://dx.doi.org/10.1143/jjap.42.l999
顯示於類別:期刊論文

文件中的檔案:
沒有與此文件相關的檔案。


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。