Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69603
標題: The effect of DC bias on the synthesis of crystalline carbon nitrides on silicon by microwave plasma enhanced chemical vapor deposition (CVD)
作者: Sung, S.L.
Tsai, T.G.
Huang, K.P.
Huang, J.H.
Shih, H.C.
關鍵字: crystalline carbon nitride
negative dc bias
Si3N4
MPECVD
thin-films
solids
期刊/報告no:: Japanese Journal of Applied Physics Part 2-Letters, Volume 37, Issue 2A, Page(s) L148-L150.
摘要: Crystalline carbon nitride compounds have been successfully deposited on a silicon wafer over an intermediate layer of Si3N4 formed by chemical conversion of the silicon using a microwave plasma enhanced chemical vapor deposition (MPECVD) process. Both nitrogen and methane were used as the primary precursors for the initial nitriding of silicon and the subsequent formation of crystalline carbon nitride. In the later step, a negative de bias of -150V was applied to the nitrided silicon substrate. The crystalline carbon nitride compounds were characterized by X-ray diffractometer and X-ray photoelectron spectroscopy and compared to alpha- and beta-Si3N4. It should be noted that crystalline carbon nitride has never been observed to form simply by reaction of solid carbon with nitrogen plasma Application of a negative de bias to the substrate has proved to be a prerequisite for the formation of carbon nitride in this study.
URI: http://hdl.handle.net/11455/69603
文章連結: http://dx.doi.org/10.1143/jjap.37.l148
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