Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69653
標題: Effects of annealing conditions on the properties of TiO2/ITO-based photoanode and the photovoltaic performance of dye-sensitized solar cells
作者: Chen, C.M.
Hsu, Y.C.
Cherng, S.J.
關鍵字: Electrode materials
Semiconductors
Photoconductivity and
photovoltaics
Annealing
oxide thin-films
enhanced efficiency
conducting glass
期刊/報告no:: Journal of Alloys and Compounds, Volume 509, Issue 3, Page(s) 872-877.
摘要: Photovoltaic performance of dye-sensitized solar cell (DSSC) is enhanced by a two-step annealing process of the photoanode. The 1st-step of annealing is performed in oxygen at 450 degrees C for 30 min which effectively removes the residual organics originated from the TiO2 precursor pastes. This enhances the dye adsorption on the TiO2 nanoparticles and raises the short-circuit current density (J(SC)). The 2nd-step of annealing is performed in nitrogen at 450 degrees C for 10 min which removes extra oxygen atoms resulted from the incorporation of oxygen atoms into the tin-doped indium oxide (ITO) film during the 1st-step of annealing. This reduces the sheet resistance of ITO and thereby enhances the fill factor (FF). With the enhanced J(SC) of 15.9mAcm(-2) and FF of 0.65, the AM1.5 solar to electric conversion efficiency (eta) of DSSC reaches 6.7% which is better than that based on the conventional one-step air annealing (eta = 5.53%, J(SC) = 14.08 mA cm(-2), FF = 0.6). (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/69653
ISSN: 0925-8388
文章連結: http://dx.doi.org/10.1016/j.jallcom.2010.09.118
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