Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69664
標題: Transport and magnetic properties of Mn-doped MgIn2-xO4
作者: Lee, M.W.
Tai, M.F.
Chiou, S.H.
關鍵字: magnetically ordered materials
oxide materials
semiconductors
transition metal alloys and compounds
magnetization
transparent conducting oxide
wide band-gap
high electroconductivity
thin-films
mgin2o4
semiconductor
implantation
spinel
phase
期刊/報告no:: Journal of Alloys and Compounds, Volume 461, Issue 1-2, Page(s) 316-320.
摘要: Transport and magnetization of MgIn2-xMnxO4 polycrystalline pellets (0 < x < 0.55) have been measured from 2 to 300 K. Doping MgIn2O4 with Mn results in an increase in electrical resistivity and a decrease in electron concentration. The electrical resistivity increases with decreasing temperature throughout the temperature range and variable-range hopping is observed at low temperatures. The diamagnetic pure MgIn2O4 changes to paramagnetic after doping. The paramagnetism of the doped samples obeys the Curie-Weiss law. The magnetic-field dependence of the magnetization of the doped samples can be well described by the Brillouin function. (C) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/69664
ISSN: 0925-8388
文章連結: http://dx.doi.org/10.1016/j.jallcom.2007.06.119
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