Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69664
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dc.contributor.authorLee, M.W.en_US
dc.contributor.authorTai, M.F.en_US
dc.contributor.authorChiou, S.H.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-11T05:58:39Z-
dc.date.available2014-06-11T05:58:39Z-
dc.identifier.issn0925-8388zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/69664-
dc.description.abstractTransport and magnetization of MgIn2-xMnxO4 polycrystalline pellets (0 < x < 0.55) have been measured from 2 to 300 K. Doping MgIn2O4 with Mn results in an increase in electrical resistivity and a decrease in electron concentration. The electrical resistivity increases with decreasing temperature throughout the temperature range and variable-range hopping is observed at low temperatures. The diamagnetic pure MgIn2O4 changes to paramagnetic after doping. The paramagnetism of the doped samples obeys the Curie-Weiss law. The magnetic-field dependence of the magnetization of the doped samples can be well described by the Brillouin function. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Alloys and Compoundsen_US
dc.relation.ispartofseriesJournal of Alloys and Compounds, Volume 461, Issue 1-2, Page(s) 316-320.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.jallcom.2007.06.119en_US
dc.subjectmagnetically ordered materialsen_US
dc.subjectoxide materialsen_US
dc.subjectsemiconductorsen_US
dc.subjecttransition metal alloys and compoundsen_US
dc.subjectmagnetizationen_US
dc.subjecttransparent conducting oxideen_US
dc.subjectwide band-gapen_US
dc.subjecthigh electroconductivityen_US
dc.subjectthin-filmsen_US
dc.subjectmgin2o4en_US
dc.subjectsemiconductoren_US
dc.subjectimplantationen_US
dc.subjectspinelen_US
dc.subjectphaseen_US
dc.titleTransport and magnetic properties of Mn-doped MgIn2-xO4en_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.jallcom.2007.06.119zh_TW
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