Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/69696
標題: First-principles analysis of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers
作者: Hao, O.Y.
Chiou, H.H.
Wu, Y.C.S.
Cheng, J.H.
Wen, O.Y.
關鍵字: molecular-dynamics
temperature
semiconductors
stability
hydrogen
silicon
期刊/報告no:: Journal of Applied Physics, Volume 102, Issue 1.
摘要: First-principles analysis is applied in relating microstructures with properties of interfacial nanoscaled oxide layers of bonded N- and P-type GaAs wafers. Using high-resolution transmission electron microscope results, the detailed atomic arrangements of materials specimen can be obtained and fed into the first-principles calculations. Therefore, the corresponding electronic structure and associated property can be reliably derived to identify responsible microstructural features. The electrical performance is found to be closely related to the variation of nanosized interface morphology and types of wafers. (c) 2007 American Institute of Physics.
URI: http://hdl.handle.net/11455/69696
ISSN: 0021-8979
文章連結: http://dx.doi.org/10.1063/1.2748335
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.