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|標題:||Growth and characterization of ZnO films on (11-20) sapphire substrates by atomic layer deposition using DEZn and N2O|
|期刊/報告no：:||Journal of Materials Science-Materials in Electronics, Volume 20, Issue 12, Page(s) 1255-1259.|
|摘要:||Zinc oxide (ZnO) films were grown on (11-20) sapphire substrates at 600 A degrees C by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). A ZnO buffer layer was deposited at low temperature (LT) prior to the growth of a bulk ZnO film for a typical growth run. In some cases, buffer-layer annealing or post-annealing treatments were employed to optimize ZnO growth. Based on the experimental results of X-ray diffractometry (XRD) and transmission electron microscopy (TEM), all the as-grown ZnO films were found to show c-axis preferred orientation with co-existence of < 1-100 >(ZnO)ayen < 1-100 >(sapphire) and < 11-20 >(ZnO)ayen < 1-100 >(sapphire) relationships in the (0001)ZnO/(11-20)sapphire hetero-interface. Typical room temperature (RT) photoluminescence (PL) spectrum of the as-grown ZnO film shows only near band edge (NBE) emissions without defect luminescence. ZnO films with improved quality were achieved by post-annealing or buffer-layer annealing treatments. In particular, buffer-layer annealing was found to improve the crystalline and optical properties of a ZnO film substantially.|
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