Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70199
標題: Formation of Epitaxial NiSi2 Nanowires on Si(100) Surface by Atomic Force Microscope Nanolithography
作者: Hsu, H.F.
Tseng, C.H.
Chen, T.H.
關鍵字: Atomic Force Microscope Nanolithography
Nickel Silicide
Nanowire
titanium silicide nanowires
lift-off process
metallic nanostructures
initial growth
nanodot arrays
fabrication
lithography
islands
si(111)
si(001)
期刊/報告no:: Journal of Nanoscience and Nanotechnology, Volume 10, Issue 7, Page(s) 4533-4537.
摘要: Ni nanowries were fabricated by atomic force microscope nanolithography, evaporation, lift-off and annealing processes. Epitaxial NiSi2 nanowires on a Si(100) surface along Si < 110 > and < 100 > directions were formed by the rapid thermal annealing treatment of the Ni nanowires at 400 degrees C. The silicide nanowires along the Si < 110 > direction had coherent type-A Si(111) and Si(100) interfaces, while those along the Si < 100 > direction had a type-A Si(110) interface. Silicide nanowires were agglomerated when the Ni nanowires were annealed at high temperature (>= 500 degrees C). The mechanism of formation of a faceted nanowire was discussed based on the minimization of the total surface energy.
URI: http://hdl.handle.net/11455/70199
ISSN: 1533-4880
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