Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70200
標題: Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth
作者: Huang, H.W.
Lee, K.Y.
Huang, J.K.
Lin, C.H.
Lin, C.F.
Yu, C.C.
Kuo, H.C.
關鍵字: GaN
Light Emitting Diodes (LEDs)
Photonic Quasi-Crystal (PQC)
Nano-Imprint Lithography (NIL)
lateral overgrowth
sapphire
fabrication
期刊/報告no:: Journal of Nanoscience and Nanotechnology, Volume 10, Issue 10, Page(s) 6363-6368.
摘要: In this paper, GaN-based LEDs with a SiO(2) photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO(2) PQC pattern (LED III (d = 1.2 mu m)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
URI: http://hdl.handle.net/11455/70200
ISSN: 1533-4880
文章連結: http://dx.doi.org/10.1166/jnn.2010.2639
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.