Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70273
標題: Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids
作者: Yang, C.C.
Dai, J.H.
Jiang, R.H.
Zheng, J.H.
Lin, C.F.
Kuo, H.C.
Wang, S.C.
關鍵字: gan
growth
期刊/報告no:: Journal of Physics and Chemistry of Solids, Volume 69, Issue 2-3, Page(s) 589-592.
摘要: Self-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The Photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices. (c) 2007 Published by Elsevier Ltd.
URI: http://hdl.handle.net/11455/70273
ISSN: 0022-3697
文章連結: http://dx.doi.org/10.1016/j.jpcs.2007.07.112
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