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|標題:||Fabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramids|
|期刊/報告no：:||Journal of Physics and Chemistry of Solids, Volume 69, Issue 2-3, Page(s) 589-592.|
|摘要:||Self-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The Photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices. (c) 2007 Published by Elsevier Ltd.|
|Appears in Collections:||期刊論文|
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