Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70273
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dc.contributor.authorYang, C.C.en_US
dc.contributor.authorDai, J.H.en_US
dc.contributor.authorJiang, R.H.en_US
dc.contributor.authorZheng, J.H.en_US
dc.contributor.authorLin, C.F.en_US
dc.contributor.authorKuo, H.C.en_US
dc.contributor.authorWang, S.C.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-11T05:59:36Z-
dc.date.available2014-06-11T05:59:36Z-
dc.identifier.issn0022-3697zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70273-
dc.description.abstractSelf-assembled inverted hexagonal pyramids with GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed through photoelectrochemical wet etching. The formation mechanism of the inverted hexagonal pyramid consisted with a lateral etching process of the InGaN/GaN active layer, bottom-up etching process from N-face GaN direction, and anisotropic etching process. The Photoluminescence (PL) intensity of GaN:Mg peak was enhanced in this inverted hexagonal pyramid caused by the quantum confinement effect of this nano-structure. These inverted hexagonal pyramids, consisting of the p-type GaN:Mg, nano-disk InGaN/GaN active layer, and n-type GaN:Si layer, are suitable for nano-scale optoelectronic devices. (c) 2007 Published by Elsevier Ltd.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Physics and Chemistry of Solidsen_US
dc.relation.ispartofseriesJournal of Physics and Chemistry of Solids, Volume 69, Issue 2-3, Page(s) 589-592.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.jpcs.2007.07.112en_US
dc.subjectganen_US
dc.subjectgrowthen_US
dc.titleFabricated nano-disk InGaN/GaN multi-quantum well of the inverse hexagonal pyramidsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.jpcs.2007.07.112zh_TW
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