Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70457
標題: High-efficiency InGaN light-emitting diodes via sidewall selective etching and oxidation
作者: Lin, C.F.
Yang, Z.J.
Zheng, J.H.
Dai, J.J.
關鍵字: n-type gan
oxide-semiconductor structures
gallium nitride
photoelectrochemical oxidation
p-gan
films
fabrication
dielectrics
epilayers
surface
期刊/報告no:: Journal of the Electrochemical Society, Volume 153, Issue 1, Page(s) G39-G43.
摘要: Photoelectrochemical etching and oxidation of the sidewall structures of InGaN light-emitting diodes has been utilized to significantly improve optical emission efficiency. Only with an H2O solution can n-type InGaN/GaN multi-quantum-well (MQW) and n-type GaN:Si layers be selectively etched off from the p-type GaN:Mg epitaxial layer. In addition, the sidewall of n-type MQW/n-type GaN layers will be oxidized and etched simultaneously. This is attributed to the interposing of a Ga2O3 layer with a low reflective index between the GaN and air as well as with the rough Ga2O3/GaN structures. Under a 20 mA operating current, and after a 10 min photoelectrochemical (PEC) oxidation process, the light output power increased by 42%. This PEC oxidizing and etching process is suitable for high-power nitride-based light-emitting diode lighting applications. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11455/70457
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.2128107
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