Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70462
標題: MOCVD Growth of GaN on Sapphire Using a Ga2O3 Interlayer
作者: Tsai, T.Y.
Ou, S.L.
Hung, M.T.
Wuu, D.S.
Horng, R.H.
關鍵字: vapor-phase epitaxy
chemical lift-off
molecular-beam epitaxy
light-emitting-diodes
c-plane sapphire
thin-film
carrier gas
beta-ga2o3
layers
fabrication
期刊/報告no:: Journal of the Electrochemical Society, Volume 158, Issue 11, Page(s) H1172-H1178.
摘要: Metalorganic chemical vapor deposition (MOCVD) was used to grow crystalline GaN on a Ga2O3 interlayer deposited by pulsed laser deposition. The Ga2O3 interlayer situated between undoped GaN (u-GaN) and sapphire can be etched out during the chemical lift-off process. A ((2) over bar 01) oriented beta-Ga2O3 thin film was first deposited on the sapphire; this was followed by u-GaN growth via MOCVD carried out in an N-2 atmosphere to prevent the decomposition of Ga2O3. Using transmission electron microscopy (TEM), the orientation relationship was observed to be GaN[11 (2) over bar0] parallel to Ga2O3[010] where the lattice mismatch between the two materials was 8.5%. The full width at half maximums of the x-ray rocking curve at the GaN (0002) plane and of the photoluminescence spectrum measured from GaN/Ga2O3/sapphire were 1444 arcsec and 8.3 nm, respectively; these were almost identical to the measured values for GaN/sapphire fabricated in an N-2 environment. It was concluded that the growth atmosphere played a more important role in determining the crystallinity of u-GaN than the Ga2O3 thin film underneath. Finally, an InGaN light-emitting diode structure was successfully fabricated on the GaN/Ga2O3/sapphire. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.073111jes] All rights reserved.
URI: http://hdl.handle.net/11455/70462
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/2.073111jes
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