Please use this identifier to cite or link to this item:
標題: Rapid Synthesis of Bundled Tungsten Oxide Nanowires by Microwave Plasma-Enhanced Chemical Vapor Deposition and Their Optical Properties
作者: Hsieh, Y.T.
Hsueh, S.H.
Chen, U.S.
Huang, M.W.
Shih, H.C.
關鍵字: field-emission properties
期刊/報告no:: Journal of the Electrochemical Society, Volume 157, Issue 9, Page(s) K183-K186.
摘要: In recent years, the synthesis of one-dimensional nanomaterials has assumed considerable importance because of the potential applications of these nanomaterials especially in nanodevices. In this study, bundled tungsten oxide (W(18)O(49)) nanowires having diameters of 25-60 nm and lengths of several micrometers were fabricated on Si substrates within 1.5 min by microwave plasma-enhanced chemical vapor deposition (MPECVD). The crystal structure, morphology, and chemical composition of these nanowires were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and cathodoluminescence (CL) spectrometry. The growth of the W(18)O(49) nanowires occurred along the [010] plane. Because no catalysts were used, it was suggested, and then analytically confirmed, that the vapor-solid mechanism was suggested for this growth process; this has been confirmed analytically. An orange emission was observed in the CL spectra, suggesting that the W(18)O(49) nanowires exhibited a redshift, resulting from the presence of significant O deficiencies. In this manner, our overall results demonstrate that MPECVD is a highly effective and suitable method for the fabrication of W(18)O(49) nanowires. (C) 2010 The Electrochemical Society. [DOI:10.1149/1.3459906] All rights reserved.
ISSN: 0013-4651
Appears in Collections:期刊論文



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.