Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70468
標題: Ultrahigh-Density beta-Ga2O3/N-doped beta-Ga2O3 Schottky and p-n Nanowire Junctions: Synthesis and Electrical Transport Properties
作者: Chang, L.W.
Li, C.F.
Hsieh, Y.T.
Liu, C.M.
Cheng, Y.T.
Yeh, J.W.
Shih, H.C.
關鍵字: gallium nitride nanowires
light-emitting-diodes
oxide nanowires
ga2o3
nanowires
thin-films
silicon
device
fabrication
photodetectors
luminescence
期刊/報告no:: Journal of the Electrochemical Society, Volume 158, Issue 3, Page(s) D136-D142.
摘要: We describe the fabrication of ultrahigh-density beta-Ga2O3 Schottky and N-doped beta-Ga2O3/beta-Ga2O3 p-n nanowire junctions via microwave plasma enhanced chemical vapor deposition and thermal chemical vapor deposition. The electron transport mechanisms with Schottky and p-n nanowire junctions were characterized by current-voltage (I-V-sd) measurements. The I-V-sd curve of different amount of the nanowires is greatly influenced by the potential barriers on the gap of Schottky nanowire junctions. N-2 plasma treatment led to rectifying electrical characteristics, suggesting that near surface was compensated by ion-induced deep-level states, which can be verified by cathodoluminescence spectrum. The current transport through p-n nanowire junctions is dominated by the deep-level-assisted tunneling mechanism for -0.8 V < V-sd < 0.6 V and by the space-charge limited conductive mechanism beyond 0.6 V. The detailed I-V-sd characteristics of the p-n nanowire junctions have been investigated in the temperature range 323-373 K. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3530787] All rights reserved.
URI: http://hdl.handle.net/11455/70468
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3530787
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