Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70469
標題: Ultrathin (AlCrTaTiZr)N-x/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects
作者: Chang, S.Y.
Chen, D.S.
關鍵字: atomic layer deposition
entropy alloy system
thermal-stability
thin-films
multiprincipal elements
barrier performance
metallization
tan
copper
si
期刊/報告no:: Journal of the Electrochemical Society, Volume 157, Issue 6, Page(s) G154-G159.
摘要: In this study, (AlCrTaTiZr)N-0.7 and (AlCrTaTiZr)(N1) films with quinary metallic elements were developed as diffusion barrier materials for Cu interconnects. To improve the interface adhesion to Cu, an AlCrTaTiZr buffer layer was deposited on the barriers to form (AlCrTaTiZr)N-0.7/AlCrTaTiZr and (AlCrTaTiZr)(N1)/AlCrTaTiZr bilayer structures. The as-deposited AlCrTaTiZr and (AlCrTaTiZr)N-0.7 films were amorphous structures, and (AlCrTaTiZr)N-1 possessed a nanocomposite structure. After annealing at 800 S C, although Cu penetrated into the AlCrTaTiZr buffer layer, the diffusion of Cu was retarded by the (AlCrTaTiZr)N-0.7 and (AlCrTaTiZr)N-1 barriers. During annealing at 900 degrees C, the interdiffusion of Si and Cu occurred through the (AlCrTaTiZr)N-0.7/AlCrTaTiZr bilayer, and Cu silicides formed. However, the (AlCrTaTiZr)N-1/AlCrTaTiZr bilayer remained stable. Neither the interdiffusion of Cu and Si through the (AlCrTaTiZr)N-1/AlCrTaTiZr bilayer nor the silicide formation was identified, indicating the high diffusion resistance of the bilayer structure. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3374194] All rights reserved.
URI: http://hdl.handle.net/11455/70469
ISSN: 0013-4651
文章連結: http://dx.doi.org/10.1149/1.3374194
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