Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70535
標題: Effect of copper barrier dielectric deposition process on characterization of copper interconnect
作者: Cheng, Y.L.
Chiu, T.J.
Wei, B.J.
Wang, H.J.
Wu, J.
Wang, Y.L.
關鍵字: adhesion
chemical mechanical polishing
copper
diffusion barriers
elemental semiconductors
heating
interconnections
metallic thin
films
plasma materials processing
silicon
silicon compounds
tantalum
compounds
vapour deposition
silicon-nitride
diffusion-barrier
hydrogen plasma
films
oxidation
期刊/報告no:: Journal of Vacuum Science & Technology B, Volume 28, Issue 3, Page(s) 567-572.
摘要: The effect of copper (Cu) barrier film deposition process on the Cu interconnects was investigated, including the waiting time between Cu chemical mechanical polishing and the barrier dielectric deposition, the preheating time, ammonia (NH(3)) plasma treatment prior to the barrier dielectric deposition, and various types of barrier dielectric. Effective treatment on the Cu surface ensures superior conductivity of the Cu interconnects and enhances the adhesion between Cu and the barrier film, causing a longer electromigration failure time. However, excessive thermal time (preheating, treatment, and deposition time) induces the Cu hillock defect. Furthermore, silicon nitride (SiN) film with a lower hydrogen content has better physical and reliability performances. Therefore, optimization of the Cu barrier deposition process is important to improve the performance of Cu interconnects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3425631]
URI: http://hdl.handle.net/11455/70535
ISSN: 1071-1023
文章連結: http://dx.doi.org/10.1116/1.3425631
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