Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70536
標題: Electrical and reliability performances of nitrogen-incorporated silicon carbide dielectric by chemical vapor deposition
作者: Cheng, Y.L.
Chen, S.A.
Chiu, T.J.
Wu, J.
Wei, B.J.
Chang, H.J.
關鍵字: copper
dielectric materials
dielectric thin films
doping
electric
breakdown
electromigration
leakage currents
nitrogen
permittivity
plasma CVD
reliability
silicon compounds
thermal stability
barrier
hexamethyldisiloxane
films
期刊/報告no:: Journal of Vacuum Science & Technology B, Volume 28, Issue 3, Page(s) 573-576.
摘要: The influence of nitrogen flow on the electrical properties of silicon carbide (SiC) barrier dielectrics prepared by plasma-enhanced chemical vapor deposition was reported. Experimental results showed that the leakage current and dielectric constant of the SiC film are reduced by increasing nitrogen flow rate. The thermal stability of the SiC film is greatly improved by doping nitrogen. The reliability of SiC barrier dielectrics deposited at various nitrogen flow rates was also investigated. The performance of dielectric breakdown is significantly improved for the nitrogen-incorporated SiC film due to its better capability in preventing copper (Cu) thermal diffusion. In addition, Cu electromigration performance is slightly enhanced by capping the SiC film deposited at a higher nitrogen flow rate because of the reinforcement of bonding strength with Cu. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3425633]
URI: http://hdl.handle.net/11455/70536
ISSN: 1071-1023
文章連結: http://dx.doi.org/10.1116/1.3425633
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.