Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70643
標題: (AlCrTaTiZr)N/(AlCrTaTiZr)N-0.7 bilayer structure of high resistance to the interdiffusion of Cu and Si at 900 degrees C
作者: Chang, S.Y.
Chen, D.S.
關鍵字: Nitrides
Thin films
Diffusion
n diffusion-barriers
entropy alloy system
multiprincipal elements
metallization
ta
microstructure
performance
film
期刊/報告no:: Materials Chemistry and Physics, Volume 125, Issue 1-2, Page(s) 5-8.
摘要: In this study, a multi-component (AlCrTaTiZr)N(AlCrTaTiZr)N-0.7 bilayer structure of about 15 nm thick was developed as a diffusion barrier material for Cu interconnects. The as-deposited (AlCrTaTiZr)N-0.7 layer was characterized to be an amorphous structure, and the (AlCrTaTiZr)N layer was a nanocomposite structure. After annealing at a high temperature of 900 degrees C, the Si/(AlCrTaTiZr)N/(AlCrTaTiZr)N-0.7/Cu film stack structure with the bilayer diffusion barrier remained stable. Only a slight amount of Cu penetrated into the top (AlCrTaTiZr)N-0.7 layer. However, neither interdiffusion of Cu and Si through the (AlCrTaTiZr)N layer occurred, nor did any silicides form, indicating the excellent diffusion resistance of the bilayer structure. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70643
ISSN: 0254-0584
文章連結: http://dx.doi.org/10.1016/j.matchemphys.2010.09.016
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