Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70644
標題: Enhanced formation and morphological stability of low-resistivity CoSi2 nanodot arrays on epitaxial Si0.7Ge0.3 virtual substrate
作者: Cheng, S.L.
Yang, C.Y.
Lee, S.W.
Hsu, H.F.
Chen, H.
關鍵字: CoSi2 nanodots
Nanosphere lithography
Si interlayer
Si1-xGex
nanosphere lithography
fabrication
silicides
crystals
growth
gate
nm
co
期刊/報告no:: Materials Chemistry and Physics, Volume 130, Issue 1-2, Page(s) 609-614.
摘要: We report here the first successful growth of large-area, low-resistivity cobalt disilicide (CoSi2) nanodot arrays on epitaxial (0 0 1)Si0.7Ge0.3 substrates by using the nanosphere lithography (NSL) technique with all interposing amorphous Si (a-Si) thin film serving as the sacrificial layer. For the Co/a-Si bilayer nanodots array on Si0.7Ge0.3 samples after annealing, polycrystalline CoSi2 appears to form as the only silicide phase at an annealing temperature as low as 500 degrees C The a-Si interlayer with appropriate thickness was found to effectively prevent Ge segregation and maintain the morphological stability in forming CoSi2 nanodots on Si0.7Ge0.3 substrate. The size, interparticle spacing, and triangular shape of the CoSi2 nanodots remain almost unchanged even after annealing at 950 degrees C. For the Co/a-Si nanodot samples further annealed at 1000 degrees C, amorphous SiOx nanowires, 15-35 nm in diameter, were observed to grow from CoSi2 nanodot regions. The observed results present the exciting prospect that the NSL technique in conjunction with a sacrificial a-Si interlayer process promises to be applicable in fabricating periodic arrays of other low-resistivity silicide nanocontacts with controlled size, shape, and periodicity on Si1-xGex, substrates. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70644
ISSN: 0254-0584
文章連結: http://dx.doi.org/10.1016/j.matchemphys.2011.07.032
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