Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70667
標題: Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography
作者: Huang, H.W.
Lin, C.H.
Huang, J.K.
Lee, K.Y.
Lin, C.F.
Yu, C.C.
Tsai, J.Y.
Hsueh, R.
Kuo, H.C.
Wang, S.C.
關鍵字: GaN
Light emitting diodes (LEDs)
Nano-hole patterned sapphire
substrate (NHPSS)
Nano-imprint lithography (NIL)
omnidirectional reflector
efficiency
leds
enhancement
extraction
期刊/報告no:: Materials Science and Engineering B-Advanced Functional Solid-State Materials, Volume 164, Issue 2, Page(s) 76-79.
摘要: In this paper, gallium-nitride (GaN)-based light-emitting diodes (LEDs) with nano-hole patterned sapphire (NHPSS) by nano-imprint lithography are fabricated and investigated. At an injection current of 20mA, the LED with NHPSS increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.33, and the wall-plug efficiency is 30% higher at 20mA indicating that the LED with NHPSS had larger light extraction efficiency. In addition, by examining the radiation patterns, the LED with NHPSS shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70667
ISSN: 0921-5107
文章連結: http://dx.doi.org/10.1016/j.mseb.2009.07.006
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.