Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70710
標題: A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
作者: Meng, C.C.
Chiang, M.H.
Wu, T.H.
關鍵字: CMOS
LNA
MOSFET amplifier
期刊/報告no:: Microwave and Optical Technology Letters, Volume 36, Issue 2, Page(s) 136-139.
摘要: A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
URI: http://hdl.handle.net/11455/70710
ISSN: 0895-2477
文章連結: http://dx.doi.org/10.1002/mop.10699
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