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|標題:||Analysis of SiC impatt device in millimeter-wave frequencies|
|期刊/報告no：:||Microwave and Optical Technology Letters, Volume 18, Issue 3, Page(s) 167-168.|
|摘要:||SiC IMPATT devices have an efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type large-signal model. The simulation demonstrates that the efficiency (and dc power density) at operating temperature (800 K) for SiC p(+) n single-drift flat-profile IMPATT structures is 12.4% (6.7 MW/cm(2)), 15% (4.5 MW/cm(2)), and 15.8% (3.3 MW/cm(2)) for frequencies of 20, 100, and 50 GHz, respectively. (C) 1998 John Wiley & Sons, Inc.|
|Appears in Collections:||期刊論文|
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