Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70715
標題: Analysis of SiC impatt device in millimeter-wave frequencies
作者: Meng, C.C.
Liao, G.R.
關鍵字: IMPATT device
SiC
millimeter wave
oscillator
期刊/報告no:: Microwave and Optical Technology Letters, Volume 18, Issue 3, Page(s) 167-168.
摘要: SiC IMPATT devices have an efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. A lucky drift model describing ionization rates as a function of electric fields at high temperatures has been incorporated into a Read-type large-signal model. The simulation demonstrates that the efficiency (and dc power density) at operating temperature (800 K) for SiC p(+) n single-drift flat-profile IMPATT structures is 12.4% (6.7 MW/cm(2)), 15% (4.5 MW/cm(2)), and 15.8% (3.3 MW/cm(2)) for frequencies of 20, 100, and 50 GHz, respectively. (C) 1998 John Wiley & Sons, Inc.
URI: http://hdl.handle.net/11455/70715
ISSN: 0895-2477
文章連結: http://dx.doi.org/10.1002/(sici)1098-2760(19980620)18:3<167::aid-mop2>3.3.co
2-y
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.