Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70771
標題: Formation and optical properties of GaN/AlN multi-stacks with GaN nano-structures by metallorganic chemical vapour deposition
作者: Yao, H.H.
Wang, Y.T.
Ou-yang, M.C.
Kuo, H.C.
Wang, S.C.
Lin, C.F.
關鍵字: phase epitaxy growth
quantum dots
v-defects
photoluminescence
heterostructures
superlattices
microscopy
mocvd
aln
期刊/報告no:: Nanotechnology, Volume 17, Issue 3, Page(s) 664-667.
摘要: A 16-pair GaN/AlN structure with GaN nano-structures at the hetero-interface was grown by a metallorganic chemical vapour deposition (MOCVD) system. From the atomic force microscopy (AFM) analysis of the AlN Surface grown on the GaN/sapphire template, there are many nano-trenches and nano-holes with a density of about 5 x 10(8) cm(-2). These GaN nano-structures fill the AlN nano-holes with a dimension of 40 x 40 nm(2) in width and depth, and with a line density of 6 x 10(4) cm(-1). Furthermore, these GaN nano-structures will be propagated and self-aligned in the growth direction. The photoluminescence (PL) measurement showed that there are bright and dark emission areas on the surface of the 16-pair GaN/AlN structure; the PL intensity at the bright region was ten times stronger than the dark region, and this stronger GaN peak has the blue-shift property caused by a quantum confined effect. In the end, we concluded that the V-shape GaN nano-structures filling the AlN nano-hole structure have a strongly quantum confined effect depending on the temperature and the power dependent PL results.
URI: http://hdl.handle.net/11455/70771
ISSN: 0957-4484
文章連結: http://dx.doi.org/10.1088/0957-4484/17/3/008
Appears in Collections:期刊論文

文件中的檔案:

取得全文請前往華藝線上圖書館



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.