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|標題:||Nitride-based LEDs with nano-scale textured sidewalls using natural lithography|
|期刊/報告no：:||Nanotechnology, Volume 17, Issue 12, Page(s) 2998-3001.|
|摘要:||This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-scale textured sidewalls. The LED with textured sidewalls increased the output power of the InGaN - GaN multiple quantum well (MQW) LEDs by a factor of 1.3, indicating that the LED with nano-scale textured sidewalls had larger light extraction efficiency. The wall-plug efficiency of nitride-based LEDs was increased by 30% using textured sidewalls.|
|Appears in Collections:||期刊論文|
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