Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70976
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dc.contributor.authorLee, M.W.en_US
dc.contributor.authorHsueh, H.C.en_US
dc.contributor.authorLin, H.M.en_US
dc.contributor.authorChen, C.C.en_US
dc.date2003zh_TW
dc.date.accessioned2014-06-11T06:00:39Z-
dc.date.available2014-06-11T06:00:39Z-
dc.identifier.issn1098-0121zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70976-
dc.description.abstractThis work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.en_US
dc.language.isoen_USzh_TW
dc.relationPhysical Review Ben_US
dc.relation.ispartofseriesPhysical Review B, Volume 67, Issue 16.en_US
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.67.161309en_US
dc.subjectgallium nitride nanowiresen_US
dc.subjectquantum wellsen_US
dc.subjectexcitonsen_US
dc.titleInterband optical transitions in GaP nanowires encapsulated in GaN nanotubesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1103/PhysRevB.67.161309zh_TW
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