Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71264
標題: Enhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surface
作者: Huang, H.W.
Lai, F.I.
Huang, J.K.
Lin, C.H.
Lee, K.Y.
Lin, C.F.
Yu, C.C.
Kuo, H.C.
關鍵字: efficiency
leds
lithography
improvement
期刊/報告no:: Semiconductor Science and Technology, Volume 25, Issue 6.
摘要: GaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO2 structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO2 nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO2 at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO2 photonic quasi-crystal (PQC) layer.
URI: http://hdl.handle.net/11455/71264
ISSN: 0268-1242
文章連結: http://dx.doi.org/10.1088/0268-1242/25/6/065007
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