Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71264
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dc.contributor.authorHuang, H.W.en_US
dc.contributor.authorLai, F.I.en_US
dc.contributor.authorHuang, J.K.en_US
dc.contributor.authorLin, C.H.en_US
dc.contributor.authorLee, K.Y.en_US
dc.contributor.authorLin, C.F.en_US
dc.contributor.authorYu, C.C.en_US
dc.contributor.authorKuo, H.C.en_US
dc.date2010zh_TW
dc.date.accessioned2014-06-11T06:01:06Z-
dc.date.available2014-06-11T06:01:06Z-
dc.identifier.issn0268-1242zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71264-
dc.description.abstractGaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO2 structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO2 nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO2 at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO2 photonic quasi-crystal (PQC) layer.en_US
dc.language.isoen_USzh_TW
dc.relationSemiconductor Science and Technologyen_US
dc.relation.ispartofseriesSemiconductor Science and Technology, Volume 25, Issue 6.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0268-1242/25/6/065007en_US
dc.subjectefficiencyen_US
dc.subjectledsen_US
dc.subjectlithographyen_US
dc.subjectimprovementen_US
dc.titleEnhancement of light output power of GaN-based light-emitting diodes using a SiO2 nano-scale structure on a p-GaN surfaceen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1088/0268-1242/25/6/065007zh_TW
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