Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71471
標題: Defect passivation by O-2 plasma treatment on high-k dielectric HfO2 films at room temperature
作者: Liu, K.C.
Tsai, J.R.
Lin, W.K.
Li, C.S.
Chen, J.N.
期刊/報告no:: Thin Solid Films, Volume 519, Issue 15, Page(s) 5110-5113.
摘要: Oxygen plasma treatment process was used to passivate the non-stoichiometric HfO2 films deposited by magnetron sputtering. After optimal oxygen plasma treatment, the gate leakage of HfO2 films would be reduced and dielectric breakdown voltage would be improved to 30 percentage. XPS spectrum was used to analysis the non-stoichiometric HfO2 films after oxygen plasma treatment which demonstrate a higher concentration of incorporated oxygen atoms at the surface in comparison to the bulk HfO2. This simple method can maintain high-k dielectric deposition process at room temperature by sputtering. It would be useful for fabrication thin film transistor on polymer based substrate in the future. (C) 2011 Published by Elsevier B.V.
URI: http://hdl.handle.net/11455/71471
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2011.01.154
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