請用此 Handle URI 來引用此文件: http://hdl.handle.net/11455/71473
標題: Effect of GaAs substrate misorientation on InxGa1-xAs crystalline quality and photovoltaic performance
作者: Tseng, M.C.
Horng, R.H.
Wuu, D.S.
Tsai, Y.L.
Kuo, C.H.
Lin, S.N.
Yu, H.H.
關鍵字: Solar cell
InGaAs crystalline film
GaAs substrate
growth
layers
diode
期刊/報告no:: Thin Solid Films, Volume 518, Issue 24, Page(s) 7213-7217.
摘要: This paper presents the quality of InxGa1 - xAs (0<x<0.2) layers grown on GaAs substrate with different miscut angle (2 degrees and 15 degrees) by metal organic chemical vapor deposition. The crystalline quality of InxGa1 - xAs layers was found to strongly depend on indium content and substrate misorientation. The In0.16Ga0.84As solar cells with PN structure were grown on a 2 degrees- and 15 degrees-off GaAs substrates. It was found that the photovoltaic performance of In0.16Ga0.84As solar cell grown on 2 degrees-off GaAs substrate was better than that of In0.16Ga0.84As grown on a 15 degrees-off GaAs substrate, because the InxGa1 - xAs films grown on 15 degrees-off GaAs substrate shows a highly strain relaxation in active layer of solar cell, which causes the high dislocation density at the initial active layer/InxGa1 - xAs graded layer interface. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71473
ISSN: 0040-6090
文章連結: http://dx.doi.org/10.1016/j.tsf.2010.04.075
顯示於類別:期刊論文

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